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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 290 Watts Junction to Case Thermal Resistance 0.6 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 12 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 60 TYP 80WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz Idq = 1.2 A, Vds = 28.0 V, F = 400 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 2.4 0.5 16.5 99 12 60 MIN 65 3 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.15 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.3 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 12 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1012 POUT VS PIN GRAPH F1012 PIN VS POUT F=400MHZ; IDQ=1.2A; VDS=28V CAPACITANCE VS VOLTAGE F1B 3DIE CAPACITANCE 100 90 80 14 13.5 13 1000 70 60 50 40 30 Efficiency = 55 % 20 10 0 0 1 2 3 4 5 6 7 8 9 10.5 10 10 0 5 10 15 VDS IN VOLTS 12.5 12 11.5 11 100 Coss Ciss Crss 20 25 30 PIN IN WATTS IV CURVE F1B 3DIE IV CURVE 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 Vds in Volts Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V ID AND GM VS VGS F1B 3 DIE GM & ID vs VG 100 Id 10 1 Gm 12 14 16 18 20 0.1 0 2 4 6 Vgs in Volts 8 10 12 14 S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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